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SIT10C065/SIT12C065 Silicon Carbide Schottky Diodes

Post Date:2024-10-09 17:48:52 Edited by:Internet








SIT10C065/SIT12C065 Silicon Carbide Schottky Diodes

Diotec's high-frequency diodes with almost zero switching losses are for power factor correction


 

Diotec SemiconductorImage of Diotec SIT10C065 and SIT12C065 Silicon Carbide Schottky DiodesThe SIT10C065 and SIT12C065 by Diotec Semiconductor are two neighboring members of the 650 V single-diode family in TO-220AC. They offer 10 A and 12 A of average forward current, respectively. Both are ideally suited for high-voltage/high-frequency switching circuits, such as power factor correction (PFC), highly efficient solar inverters, or data server power supplies. Both devices feature a high reverse voltage of 650 V combined with an extremely low reverse recovery, also known as better discharging time. That makes the SIT10C065 AND SIT12C065 ideally suited for all applications where high voltage levels are switched at very high frequencies. In that case, switching losses are dominant, which calls for high-efficiency Schottky rectifiers. Silicon carbide wafer material overcomes the limitations of silicon-based Schottky diodes.

Specifications
  • 10 A and 12 A average forward current (IFAV)
  • 650 V repetitive reverse voltage (VRRM)
  • Typical forward voltage (VF 1.7 V at 10 A and +175°C (SIT10C065) and 1.75 V at 12 A and +175°C (SIT12C065)
  • Typical reverse leakage 20 µA at 650 V and +175°C (IR)
  • Total capacitive charge 28 nC at 400 V, 10 A, 200 A/µs (QC)
  • TO-220AC case outline
Features
  • High reverse voltage
  • Almost zero switching losses
  • Low reverse leakage current
  • High-efficiency high-frequency switching
  • Single diodes in industry standard case outline





 


Tags:SIT10C065  

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